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2SA1013 - PNP Transistor

General Description

High Voltage and High Current Vceo=-160V(Min.) Excellent hFE Linearity Low Noise Complement to Type 2SC2383 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Drive

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isc Silicon PNP Transistor INCHANGE Semiconductor 2SA1013 DESCRIPTION ·High Voltage and High Current Vceo=-160V(Min.) ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SC2383 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency general purpose amplifier Applications ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT -160 V -160 V -6 V -1 A -500 mA 900 mW 150 ℃ -55~150 ℃ isc website: www.iscsemi.