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IDT71V3578S - 3.3V Synchronous SRAMs

Download the IDT71V3578S datasheet PDF. This datasheet also covers the IDT71V3576S variant, as both devices belong to the same 3.3v synchronous srams family and are provided as variant models within a single manufacturer datasheet.

Description

The IDT71V3576/78 are high-speed SRAMs organized as 128K x 36/256K x 18.

The IDT71V3576/78 SRAMs contain write, data, addressandcontrolregisters.

InternallogicallowstheSRAMtogenerate a self-timed write based upon a decision which can be left until the end of the write cycle.

Features

  • 128K x 36, 256K x 18 memory configurations.
  • Supports high system speed: Commercial and Industrial:.
  • 150MHz 3.8ns clock access time.
  • 133MHz 4.2ns clock access time.
  • LBO input selects interleaved or linear burst mode.
  • Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx).
  • 3.3V core power supply.
  • Power down controlled by ZZ input.
  • 3.3V I/O.
  • Packaged in a JEDEC Standard 100-pin plastic thin qua.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IDT71V3576S-IDT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IDT71V3578S
Manufacturer IDT
File Size 175.37 KB
Description 3.3V Synchronous SRAMs
Datasheet download datasheet IDT71V3578S Datasheet

Full PDF Text Transcription

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128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect IDT71V3576S IDT71V3578S Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ 3.3V core power supply ◆ Power down controlled by ZZ input ◆ 3.3V I/O ◆ Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP) Description The IDT71V3576/78 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V3576/78 SRAMs contain write, data, addressandcontrolregisters.
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