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HY64UD16322A - 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM

Description

and is subject to change without notice.

Hynix Semiconductor Inc.

does not assume any responsibility for use of circuits described.

Features

  • CMOS Process Technology.
  • 2M x 16 bit Organization.
  • TTL compatible and Tri-state outputs.
  • Deep Power Down : Memory cell data hold invalid.
  • Standard pin configuration : 48-FBGA(6mmX8mm).
  • Data mask function by /LB, /UB.
  • Separated I/O Power Supply : Vddq.

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Datasheet Details

Part number HY64UD16322A
Manufacturer SK Hynix
File Size 294.19 KB
Description 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
Datasheet download datasheet HY64UD16322A Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com HY64UD16322A Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History 1.0 1.1 Initial Change process code -B Draft Date Jan. 03. ’03 May. 13. ’03 Remark Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Revision 1.1 May. 2003 1 HY64UD16322A Series 2M x 16 bit Low Low Power 1T/1C SRAM DESCRIPTION The HY64UD16322A is a 32Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The HY64UD16322A adopts one transistor memory cell and is organized as 2,097,152 words by 16bits.
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