Datasheet4U Logo Datasheet4U.com

HY5DU56422T - (HY5DU56xxx(L)T) 2nd 256M DDR SDRAM

Download the HY5DU56422T datasheet PDF. This datasheet also covers the HY5DU56822T variant, as both devices belong to the same (hy5du56xxx(l)t) 2nd 256m ddr sdram family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

Hynix Semiconductor Inc.

does not assume any responsibility for use of circuits described.

Features

  • VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL ali.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY5DU56822T_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY5DU56422T
Manufacturer SK Hynix
File Size 370.15 KB
Description (HY5DU56xxx(L)T) 2nd 256M DDR SDRAM
Datasheet download datasheet HY5DU56422T Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HY5DU561622CTP 256M gDDR SDRAM Hynix
HY5DU281622 4 Banks x 2M x 16Bit Double Data Rate SDRAM Hyundai
HY5DU281622FTP 128Mb DDR SDRAM Hynix
HY5DU281622LT-H 4 Banks x 2M x 16Bit Double Data Rate SDRAM Hyundai
HY5DU281622LT-K 4 Banks x 2M x 16Bit Double Data Rate SDRAM Hyundai

Other Datasheets by SK Hynix

Part Number Description
HY5DU56422AT (HY5DU56xx22A(L)T) 256M-S DDR SDRAM
HY5DU56422BT-D4 (HY5DU56x22BT-D4x) 256M-P DDR SDRAM
HY5DU56422BT-D43 (HY5DU56x22BT-D4x) 256M-P DDR SDRAM
HY5DU56422CF (HY5DU56xxxC(L)F) 256M DDR SDRAM
HY5DU56422CT (HY5DU56xx22CT) 256M-P DDR SDRAM

Full PDF Text Transcription

Click to expand full text
m o .c U 4 t e e h S a at .D w w w HY5DU56422(L)T HY5DU56822(L)T HY5DU561622(L)T m 2nd 256M DDR SDRAM o .c U 4 t e e h S a t a .D w w w HY5DU56422(L)T HY5DU56822(L)T HY5DU561622(L)T This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.7/May. 02 1 m o .c U 4 t e e h S a at .D w w w HY5DU56422(L)T HY5DU56822(L)T HY5DU561622(L)T Revision History 1. Revision 0.4 (Nov. 01) 1) Removed ‘Preliminary’ 2. Revision 0.5 (Dec. 01) 1) Separated ‘Function description’ and ‘Timing diagram’ parts - These are available in Web site (www.hynix.com) 3. Revision 0.6 (May. 02) 1) Input leakage current changed from +/-5uA to +/-2uA 4.
Published: |