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HY27UF081G2M - (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory

Description

The HYNIX HY27(U/S)F(08/16)1G2M series is a 128Mx8bit with spare 4Mx8 bit capacity.

The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

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Datasheet Details

Part number HY27UF081G2M
Manufacturer Hynix Semiconductor
File Size 420.81 KB
Description (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
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( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 1) Initial Draft. 1) Correct Fig.10 Sequential out cycle after read 2) Add the text to Fig.1, Table.1, Table.2 - text : IO15 - IO8 (x16 only) 3) Delete ‘3.2 Page program NOTE 1. - Note : if possible it is better to remove this constrain 4) Change the text ( page 10,13, 45) - 2.2 Address Input : 28 Addresses -> 27 Addresses - 3.7 Reset : Fig.29 -> Fig.30 - 5.1 Automatic page read after power up : Fig.30 -> Fig.29 5) Add 5.3 Addressing for program operation & Fig.34 1) Change TSOP, WSOP, FBGA package dimension & figures.
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