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HY27UF084G2M - 4Gbit (512K x 8-Bit) NAND Flash

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Rev. 0.3 / Nov. 2005 2 Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash Revision History Revision No. 1) Change AC Characteristics tR Before After 20 25 tCLS 0.2 Before After 12 15 tAR 10 15 tWP 12 15 tDS 12 15 tREA 18 20 tWC 25 30 tRHZ 30 50 tADL 70 100 tCHZ 30 50 tRP 12 15 tCEA 25 35 tRC 25 30 Oct. 08. 2005 Preliminary -Continued- History Draft Date Remark 2) Add tCRRH (100ns, Min) - tCRRH : Cache Read RE# High 3) Change 3rd Read ID - 3rd Read ID is changed to 80h - 3rd By.

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Datasheet Details

Part number HY27UF084G2M
Manufacturer Hynix Semiconductor
File Size 414.29 KB
Description 4Gbit (512K x 8-Bit) NAND Flash
Datasheet download datasheet HY27UF084G2M Datasheet
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( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.3/ Nov. 2005 1 www.DataSheet4U.com www.DataSheet4U.com Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash Document Title 4Gbit (512Mx8bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Add ULGA Package. - Figures & texts are added. 2) Add Read ID Table 3) Correct the test Conditions (DC Characteristics table) Test Conditions (ILI, ILO) Before VIN=VOUT=0 to 3.6V History Draft Date Dec.
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