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CS7N70ARD - Silicon N-Channel Power MOSFET

Description

avalanche energy.

Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS7N70ARD
Manufacturer Huajing Microelectronics
File Size 347.44 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS7N70ARD Datasheet

Full PDF Text Transcription

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Silicon N-Channel Power MOSFET CS7N70 ARD ○R General Description: CS7N70 ARD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-262, which accords with the RoHS standard. Features: l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger.
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