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Silicon N-Channel Power MOSFET CS7N60 A7HD
○R
General Description：
CS7N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-126F,
which accords with the RoHS standard.
Features：
l Fast Switching l ESD Improved Capability
l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test
600 V 7A 40 W
0.88 Ω
Applications：
Power switch circuit of adaptor and charger.
CS7N60A7HD Datasheet
