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Silicon N-Channel Power MOSFET
○R
CS7N10 AQ2-1
General Description：
CS7N10 AQ2-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching
VDSS ID PD RDS(ON)Typ
100
V
7
A
16.8
W
113
mΩ
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications.. The package form is DFN3×3-8L, which accords with the RoHS
standard..
Features：
l Fast Switching l Low ON Resistance(Rdson≤150 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Top View
Power switch circuit of adaptor and charger.
CS7N10AQ2-1 Datasheet
