Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A).
Low drive current.
High speed switching.
4V gate drive devices. Outline
UPAK
3
D
2
1
4
G
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2788
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse).
2 1
Ratings 60 ±20 2 4 2 1 150.
55 to +150
Unit V V A A A W °C °C
Body to drain diode re.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2788. For precise diagrams, and layout, please refer to the original PDF.
2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low driv...
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on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2788 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)* 2 1 Ratings 60 ±20 2 4 2 1 150 –55 to +150 Unit V V A A A W °C °C Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Pch* Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 x 20
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K2788 Datasheet
