220CFM
ADE-208-533B(Z) 3rd. Edition Jun 1998
D
G
123
1. Gate
2. Drain
3. Source
S
2SK2737
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation
VDSS VGSS ID I Note1
D(pulse)
I DR Pch Note2
Channel temperature
Tch
Stora.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2737. For precise diagrams, and layout, please refer to the original PDF.
2SK2737 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–...
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10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM ADE-208-533B(Z) 3rd. Edition Jun 1998 D G 123 1. Gate 2. Drain 3. Source S 2SK2737 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.
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