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HM62W16255HI - 4M High Speed SRAM (256-kword x 16-bit)

Description

The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology.

Features

  • Single 3.3 V supply: 3.3 V ± 0.3V.
  • Access time: 15 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current: 160 mA (max).
  • TTL standby current: 50 mA (max).
  • CMOS standby current: 5 mA (max).
  • Center VCC and VSS type pinout.
  • Temperature range:.
  • 40 to 85°C HM62W16255HI Series Ordering Inf.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HM62W16255H 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HC 4M High Speed SRAM (256-kword x 16-bit)
HM62W16256B 4 M SRAM (256-kword x 16-bit)
HM62W16258B 4 M SRAM (256-kword x 16-bit)
HM62W16258BI 4 M SRAM (256-kword x 16-bit)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM62W16255HI Series 4M High Speed SRAM (256-kword × 16-bit) ADE-203-1038B (Z) Rev. 2.0 Jan. 20, 2000 Description The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII. Features • Single 3.3 V supply: 3.3 V ± 0.
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