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HM62W16258B - 4 M SRAM (256-kword x 16-bit)

Description

The Hitachi HM62W16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit.

HM62W16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology.

Features

  • Single 3.3 V supply: 3.3 V ± 0.3 V Fast access time: 55 ns/70 ns (max) Power dissipation:  Active: 9.9 mW (typ)  Standby: 3.3 µW (typ) Completely static memory.  No clock or timing strobe required Equal access and cycle times Common data input and output.  Three state output Battery backup operation.
  • HM62W16258B Series Ordering Information Type No. HM62W16258BLTT-5 HM62W16258BLTT-7 HM62W16258BLTT-5SL HM62W16258BLTT-7SL A.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HM62W16258BI 4 M SRAM (256-kword x 16-bit)
HM62W16255H 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HC 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HI 4M High Speed SRAM (256-kword x 16-bit)
HM62W16256B 4 M SRAM (256-kword x 16-bit)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM62W16258B Series 4 M SRAM (256-kword × 16-bit) ADE-203-976B (Z) Rev. 2.0 Oct. 14, 1999 Description The Hitachi HM62W16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII. Features • • • Single 3.3 V supply: 3.3 V ± 0.3 V Fast access time: 55 ns/70 ns (max) Power dissipation:  Active: 9.9 mW (typ)  Standby: 3.3 µW (typ) Completely static memory.  No clock or timing strobe required Equal access and cycle times Common data input and output.  Three state output Battery backup operation.
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