Datasheet4U Logo Datasheet4U.com

4AM15 - Silicon N-Channel/P-Channel Power MOS FET Array

Key Features

  • Low on-resistance N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2 A P Channel: RDS(on) ≤ 0.9 Ω, VGS =.
  • 10 V, ID =.
  • 2 A.
  • Low drive current High speed switching High density mounting Suitable for H-bridged motor driver Outline www. DataSheet. in 4AM15 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissi.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
4AM11 Silicon N-Channel/P-Channel Power MOS FET Array
4AM13 Silicon N-Channel/P-Channel Power MOS FET Array
4AM16 Silicon N-Channel/P-Channel Power MOS FET Array
4AM17 Silicon N/P-Channel/P-Channel Power MOS FET Array

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4AM15 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2 A P Channel: RDS(on) ≤ 0.9 Ω, VGS = –10 V, ID = –2 A • • • • Low drive current High speed switching High density mounting Suitable for H-bridged motor driver Outline www.DataSheet.in 4AM15 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)*1 IDR Nch 200 ±20 4 16 4 Pch –200 ±20 –4 –16 –4 Unit V V A A A W W °C °C Pch (Tc = 25°C)*2 32 Pch*2 4.0 150 –55 to +150 Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.