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4AM16 - Silicon N-Channel/P-Channel Power MOS FET Array

Key Features

  • Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS =.
  • 10 V, I D =.
  • 4 A.
  • High speed switching.
  • High density mounting.
  • Suitable for H-brided motor driver Outline www. DataSheet. in 4AM16 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID.

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Part Number Description Manufacturer

Other Datasheets by Hitachi Semiconductor (now Renesas)

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, I D = –4 A • High speed switching • High density mounting • Suitable for H-brided motor driver Outline www.DataSheet.in 4AM16 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Device Operation Tch Tstg 2 2 1 Nch 60 ±20 8 32 8 28 4.