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SCX70R360C6 - 700V N-Channel Super Junction Power MOSFET

Description

The Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency.

Features

  • VDS,min@Tj(max)=750V.
  • ID=12A.
  • RDS(ON) TYP:0.31Ω@VGS=10V ID=6A MAX:0.36Ω.

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Datasheet Details

Part number SCX70R360C6
Manufacturer HiSemicon
File Size 1.45 MB
Description 700V N-Channel Super Junction Power MOSFET
Datasheet download datasheet SCX70R360C6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SCX70R360C6 700V N-Channel Super Junction Power MOSFET GENERAL DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency. Features ◆VDS,min@Tj(max)=750V ◆ID=12A ◆RDS(ON) TYP:0.31Ω@VGS=10V ID=6A MAX:0.36Ω Applications ◆Power faction correction (PFC) ◆Switched mode power supplies (SMPS) ◆Uninterruptible power supply (UPS) ◆LED lighting power ORDERING INFORMATION Part No. SCF70R360C6 SCP70R360C6 SCD70R360C6 Package TO-220F-3L TO-220-3L TO-252-2L Marking SCF70R360C6 SCP70R360C6 SCD70R360C6 Http://www.hi-semicon.com Material Pb Free Pb Free Pb Free Packing Tube Tube Reel Rev 1.
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