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SCX65R380C - 650V N-CHANNEL POWER MOSFET

Description

The Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency.

Features

  • VDS=650V, ID=11A.
  • V =700V DS,min@Tj(max).
  • RDS(ON) TYP:320mΩ@VGS=10V , ID=5.5A MAX:380mΩ.

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Datasheet Details

Part number SCX65R380C
Manufacturer HiSemicon
File Size 886.24 KB
Description 650V N-CHANNEL POWER MOSFET
Datasheet download datasheet SCX65R380C Datasheet

Full PDF Text Transcription (Reference)

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SCX65R380C 650V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency. Features ◆VDS=650V, ID=11A ◆V =700V DS,min@Tj(max) ◆RDS(ON) TYP:320mΩ@VGS=10V , ID=5.5A MAX:380mΩ Applications ◆Power faction correction (PFC) ◆Switched mode power supplies (SMPS) ◆Uninterruptible power supply (UPS) ◆LED lighting power TO-220F-3L TO-220-3L TO-252-2L ORDERING INFORMATION Part No. SCF65R380C SCP65R380C SCD65R380C Package TO-220F-3L TO-220-3L TO-252-2L Http://www.hi-semicon.
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