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SCX60R190C - 600V N-CHANNEL MOSFET

Description

The Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency.

Features

  • VDS(V)=600V, ID=20A.
  • RDS(ON) TYP:156mΩ@VGS=10V , ID=10A MAX:190mΩ.

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Datasheet Details

Part number SCX60R190C
Manufacturer HiSemicon
File Size 972.10 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SCX60R190C Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SCX60R190C 600V N-CHANNEL MOSFET GENERAL DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency. Features ◆VDS(V)=600V, ID=20A ◆RDS(ON) TYP:156mΩ@VGS=10V , ID=10A MAX:190mΩ Applications ◆Power faction correction (PFC) ◆Switched mode power supplies (SMPS) ◆Uninterruptible power supply (UPS) ◆LED lighting power TO-220F-3L TO-220-3L TO-263-2L ORDERING INFORMATION Part No. SCF60R190C SCP60R190C SCA60R190C Package TO-220F-3L TO-220-3L TO-263-2L Http://www.hi-semicon.com Marking SCF60R190C SCP60R190C SCA60R190C Material Pb Free Pb Free Pb Free Packing Tube Tube Reel Rev 1.
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