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HTIP31C - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HTIP31C datasheet PDF. This datasheet also covers the HTIP31C_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HTIP31C is designed for use in general purpose amplifier and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HTIP31C_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HTIP31C
Manufacturer Hi-Sincerity Mocroelectronics
File Size 42.46 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HTIP31C Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HTIP31C NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6721 Issued Date : 1993.09.24 Revised Date : 2004.11.19 Page No. : 1/4 Description The HTIP31C is designed for use in general purpose amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .............................................................................................
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