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HTIP112 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HTIP112 datasheet PDF. This datasheet also covers the HTIP112_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications.

Maximum Temperatures B Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum R1 R2 E Maxim

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HTIP112_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HTIP112
Manufacturer Hi-Sincerity Mocroelectronics
File Size 52.92 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HTIP112 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HTIP112A SILICON NPN POWER DARLINGTON TRANSISTOR HI-SINCERITY

Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
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HTIP107 PNP EPITAXIAL PLANAR TRANSISTOR
HTIP122 NPN EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2004.11.19 Page No. : 1/5 Description The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications. TO-220 Darlington Schematic C Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures B Storage Temperature ................................................................... -55 ~ +150 °C Junction Temperature .......................................................... +150 °C Maximum R1 R2 E • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 50 W Total Power Dissipation (TA=25°C) ..
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