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HI-SINCERITY
MICROELECTRONICS CORP.
HTIP122
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6712 Issued Date : 1993.01.13 Revised Date : 2004.11.19 Page No. : 1/5
Description
The HTIP122 is designed for use in general purpose amplifier and low-speed switching applications.
TO-220
Darlington Schematic C
Absolute Maximum Ratings (TA=25°C)
• Maximum Temperatures
B
Storage Temperature ................................................................... -55 ~ +150 °C Junction Temperature .......................................................... +150 °C Maximum
R1 R2 E
• Maximum Power Dissipation
Total Power Dissipation (TC=25°C) .................................................................................................................... 65 W Total Power Dissipation (TA=25°C) ....
HTIP122 Datasheet
