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HTIP105 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HTIP105 datasheet PDF. This datasheet also covers the HTIP105_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HTIP105 is designed for monolithic construction with built in base-emitter shunt resistors industrial.

Maximum Temperatures B Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum R1 R2 E

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Note: The manufacturer provides a single datasheet file (HTIP105_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HTIP105
Manufacturer Hi-Sincerity Mocroelectronics
File Size 41.98 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HTIP105 Datasheet

📁 Similar Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

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HTIP102 NPN EPITAXIAL PLANAR TRANSISTOR
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HTIP117 PNP EPITAXIAL PLANAR TRANSISTOR
HTIP122 NPN EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HTIP105 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6743 Issued Date : 1998.07.01 Revised Date : 2004.11.19 Page No. : 1/4 Description The HTIP105 is designed for monolithic construction with built in base-emitter shunt resistors industrial. TO-220 Darlington Schematic C Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures B Storage Temperature ................................................................... -55 ~ +150 °C Junction Temperature .......................................................... +150 °C Maximum R1 R2 E • Maximum Power Dissipation Total Power Dissipation (TC=25°C) ....................................................................................................................
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