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HSC3953S - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HSC3953S datasheet PDF. This datasheet also covers the HSC3953S_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

High-definition CRT display video output, wide-band amplifier applications.

Features

  • High fT: 500MHz.
  • High breakdown voltage: VCEO=120V min.
  • Small reverse transfer capacitance TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSC3953S_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSC3953S
Manufacturer Hi-Sincerity Mocroelectronics
File Size 46.22 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSC3953S Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HSC3953S NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6502 Issued Date : 1992.08.25 Revised Date : 2005.02.15 Page No. : 1/4 Description High-definition CRT display video output, wide-band amplifier applications. Features • High fT: 500MHz • High breakdown voltage: VCEO=120V min • Small reverse transfer capacitance TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .............
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