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HI6718 - NPN Transistor

Download the HI6718 datasheet PDF. This datasheet also covers the HI6718_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HI6718 is designed for general purpose medium power amplifier and switching.

Features

  • High power: 1.2W.
  • High current: 1A Absolute Maximum Ratings (Ta=25°C).
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W.
  • Maximum Voltages and Currents DataSheet4U. com BVCBO Collector to Base Voltage 100 V DataShee BVCEO Collector to Emitter Voltage 100 V BVEBO Emitter to Base Voltage 5 V IC Collector Current 1 A Characteristics (Ta=25°C) Symb.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HI6718_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI6718
Manufacturer Hi-Sincerity Mocroelectronics
File Size 181.59 KB
Description NPN Transistor
Datasheet download datasheet HI6718 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9008-A Issued Date : 1998.04.10 Revised Date : 2000.11.01 Page No. : 1/2 HI6718 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI6718 is designed for general purpose medium power amplifier and switching. Features • High power: 1.2W • High current: 1A Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................................................................
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