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HI669A - NPN Transistor

Download the HI669A datasheet PDF. This datasheet also covers the HI669A_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HI669A is designed for low frequency power amplifier.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 1 W Maximum Voltages

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HI669A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI669A
Manufacturer Hi-Sincerity Mocroelectronics
File Size 191.95 KB
Description NPN Transistor
Datasheet download datasheet HI669A Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2002.09.16 Page No. : 1/3 HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................................................................... 1 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage....
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