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HI649A - PNP Transistor

Download the HI649A datasheet PDF. This datasheet also covers the HI649A_Hi variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HI649A is designed for low frequency power amplifier.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W Maximum Voltage

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HI649A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI649A
Manufacturer Hi-Sincerity Mocroelectronics
File Size 192.82 KB
Description PNP Transistor
Datasheet download datasheet HI649A Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2002.04.03 Page No. : 1/3 HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage.....
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