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HE9014 - NPN TRANSISTOR

Download the HE9014 datasheet PDF. This datasheet also covers the HE9014_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HE9014 is designed for use in pre-amplifier of low level and low noise.

Features

  • High Total Power Dissipation (PD: 450mW).
  • Complementary to HE9015.
  • High hFE and Good Linearity TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 450 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HE9014_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HE9014
Manufacturer Hi-Sincerity Mocroelectronics
File Size 57.63 KB
Description NPN TRANSISTOR
Datasheet download datasheet HE9014 Datasheet

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HE9014 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6102 Issued Date : 1992.08.25 Revised Date : 2005.02.04 Page No. : 1/5 Description The HE9014 is designed for use in pre-amplifier of low level and low noise. Features • High Total Power Dissipation (PD: 450mW) • Complementary to HE9015 • High hFE and Good Linearity TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............
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