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HE9012 - PNP TRANSISTOR

Download the HE9012 datasheet PDF. This datasheet also covers the HE9012_Hi variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HE9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.

Features

  • High total power dissipation (PT: 625mW).
  • High collector current (IC: 500mA).
  • Complementary to HE9013.
  • Excellent linearity TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HE9012_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HE9012
Manufacturer Hi-Sincerity Mocroelectronics
File Size 54.28 KB
Description PNP TRANSISTOR
Datasheet download datasheet HE9012 Datasheet

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6103 Issued Date : 1992.09.09 Revised Date : 2004.09.29 Page No. : 1/5 HE9012 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Features • High total power dissipation (PT: 625mW) • High collector current (IC: 500mA) • Complementary to HE9013 • Excellent linearity TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................
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