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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6104 Issued Date : 1992.09.09 Revised Date : 2004.09.29 Page No. : 1/5
HE9013
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Features
• High Total Power Dissipation (PT: 625mW) • High Collector Current (IC: 500mA) • Complementary to HE9012 • Excellent lnearity
TO-92
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................