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HE9013 - NPN TRANSISTOR

Download the HE9013 datasheet PDF. This datasheet also covers the HE9013_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.

Features

  • High Total Power Dissipation (PT: 625mW).
  • High Collector Current (IC: 500mA).
  • Complementary to HE9012.
  • Excellent lnearity TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HE9013_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HE9013
Manufacturer Hi-Sincerity Mocroelectronics
File Size 54.09 KB
Description NPN TRANSISTOR
Datasheet download datasheet HE9013 Datasheet

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6104 Issued Date : 1992.09.09 Revised Date : 2004.09.29 Page No. : 1/5 HE9013 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Features • High Total Power Dissipation (PT: 625mW) • High Collector Current (IC: 500mA) • Complementary to HE9012 • Excellent lnearity TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................
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