Datasheet4U Logo Datasheet4U.com

HBD678 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HBD678 datasheet PDF. This datasheet also covers the HBD678_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HBD678 is designed for use as output devices in complementary general purpose amplifier applications.

Features

  • High Current Gain.
  • Monolithic Constructor Absolute Maximum Ratings (Ta=25°C).
  • Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W.
  • Maximum Voltages and Currents BVCBO Collector to Base Voltage 60 V BVCEO Collector to Emitter Voltage 60 V BVEBO Emitter to Base Voltage 5 V IC Collector Current 4 A IB Base Current 1 A Electrical Characteris.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HBD678_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBD678
Manufacturer Hi-Sincerity Mocroelectronics
File Size 22.84 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBD678 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HBD HBD SERIES - DUAL OUTPUT/ 60 WATT Power-One
HBD-DZ170 DVD RECEIVER SERVICE MANUAL Sony
HBD-DZ171 DVD RECEIVER SERVICE MANUAL Sony
HBD-DZ175 DVD RECEIVER SERVICE MANUAL Sony
HBD-DZ310 DVD RECEIVER SERVICE MANUAL Sony

Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HBD675 NPN EPITAXIAL PLANAR TRANSISTOR
HBD677 NPN EPITAXIAL PLANAR TRANSISTOR
HBD136 PNP POWER TRANSISTORS
HBD139 NPN POWER TRANSISTORS
HBD140 PNP POWER TRANSISTORS

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6625-A Issued Date : 1994.10.04 Revised Date : 2000.10.01 Page No. : 1/2 HBD678 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBD678 is designed for use as output devices in complementary general purpose amplifier applications. Features • High Current Gain • Monolithic Constructor Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................................................................
Published: |