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HBD675 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HBD675 datasheet PDF. This datasheet also covers the HBD675_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HBD675 is designed for use as output devices in complementary general purpose amplifier applications.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipa

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Note: The manufacturer provides a single datasheet file (HBD675_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBD675
Manufacturer Hi-Sincerity Mocroelectronics
File Size 30.23 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBD675 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6619-C Issued Date : 1994.07.22 Revised Date : 2000.10.01 Page No. : 1/3 HBD675 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBD675 is designed for use as output devices in complementary general purpose amplifier applications. Absolute Maximum Ratings(Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................................................................
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