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HBD677 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HBD677 datasheet PDF. This datasheet also covers the HBD677_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HBD677 is designed for use as output devices in complementary general purpose amplifier applications.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissip

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Note: The manufacturer provides a single datasheet file (HBD677_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBD677
Manufacturer Hi-Sincerity Mocroelectronics
File Size 30.23 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBD677 Datasheet

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6620-B Issued Date : 1994.07.22 Revised Date : 2000.10.01 Page No. : 1/3 HBD677 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBD677 is designed for use as output devices in complementary general purpose amplifier applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................................................................
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