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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6620-B Issued Date : 1994.07.22 Revised Date : 2000.10.01 Page No. : 1/3
HBD677
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBD677 is designed for use as output devices in complementary general purpose amplifier applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................................................................