Click to expand full text
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :Preliminary Data Issued Date : 2000.10.01 Revised Date : 2000.10.01 Page No. : 1/3
HAD826SP
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HAD826SP is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
• Low Collector Saturation Voltage • High Speed Switching
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature....................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................. 150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ..........................................................