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HAD826SP - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HAD826SP datasheet PDF. This datasheet also covers the HAD826SP_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HAD826SP is designed for general purpose amplifier and high speed, medium-power switching applications.

Features

  • Low Collector Saturation Voltage.
  • High Speed Switching Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 500 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HAD826SP_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HAD826SP
Manufacturer Hi-Sincerity Mocroelectronics
File Size 27.68 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HAD826SP Datasheet

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :Preliminary Data Issued Date : 2000.10.01 Revised Date : 2000.10.01 Page No. : 1/3 HAD826SP NPN EPITAXIAL PLANAR TRANSISTOR Description The HAD826SP is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation Voltage • High Speed Switching Absolute Maximum Ratings • Maximum Temperatures Storage Temperature....................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................. 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ..........................................................
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