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HAD826 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HAD826 datasheet PDF. This datasheet also covers the HAD826_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HAD826 is designed for general purpose amplifier and high speed, medium-power switching applications.

Features

  • Low Collector Saturation Voltage.
  • High Speed Switching Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
  • Maximum Power Dissipations Total Power Dissipation (Ta=25°C) 625 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 75 V VCEO Collector to Emit.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HAD826_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HAD826
Manufacturer Hi-Sincerity Mocroelectronics
File Size 34.05 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HAD826 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6411-B Issued Date : 199.03.06 Revised Date : 2000.09.01 Page No. : 1/3 HAD826 NPN EPITAXIAL PLANAR TRANSISTOR Description The HAD826 is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation Voltage • High Speed Switching Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .......................................................................................... -55 ~ +150 °C Junction Temperature..................................................................................... 150 °C Maximum • Maximum Power Dissipations Total Power Dissipation (Ta=25°C) ..............................................................................
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