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HAD825 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HAD825 datasheet PDF. This datasheet also covers the HAD825_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Darlington transistor. Spec. No. : HE6406 Issued Date : 1994.01.13 Revised Date : 2002.03.06 Page No. : 1/3 Absolute Maximum Ratings TO-92.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipations Total Power Dissipation (Ta=25°C) 625 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 80 V VCES Collector to Emitter Voltage 55 V VEBO Emitter to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HAD825_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HAD825
Manufacturer Hi-Sincerity Mocroelectronics
File Size 29.51 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HAD825 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

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HAD825SP NPN EPITAXIAL PLANAR TRANSISTOR
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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HAD825 NPN EPITAXIAL PLANAR TRANSISTOR Features Darlington transistor. Spec. No. : HE6406 Issued Date : 1994.01.13 Revised Date : 2002.03.06 Page No. : 1/3 Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum • Maximum Power Dissipations Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ................................................................................
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