Datasheet4U Logo Datasheet4U.com

H2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the H2N5551 datasheet PDF. This datasheet also covers the H2N5551_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The H2N5551 is designed for amplifier transistor.

Features

  • Complements to PNP Type H2N5401.
  • High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage 180 V VCEO Collector to Emitter Voltage 160 V VEBO Emitter to Base Voltage 6 V IC Coll.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2N5551_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N5551
Manufacturer Hi-Sincerity Mocroelectronics
File Size 52.66 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N5551 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
H2N60D N-Channel MOSFET HAOHAI
H2N60F N-Channel MOSFET HAOHAI
H2N60P N-Channel MOSFET HAOHAI
H2N60U N-Channel MOSFET HAOHAI
H2N7002SN N-Channel MOSFET HI-SINCERITY

Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR
H2N5088 NPN EPITAXIAL PLANAR TRANSISTOR
H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR
H2N5366 PNP EPITAXIAL PLANAR TRANSISTOR
H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features • Complements to PNP Type H2N5401 • High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ....................................
Published: |