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H2N5401 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the H2N5401 datasheet PDF. This datasheet also covers the H2N5401_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The H2N5401 is designed for general purpose applications requiring high breakdown voltages.

Features

  • Complements to NPN Type H2N5551.
  • High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Bas.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2N5401_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N5401
Manufacturer Hi-Sincerity Mocroelectronics
File Size 52.59 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N5401 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR
H2N5088 NPN EPITAXIAL PLANAR TRANSISTOR
H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR
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H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6203 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Page No. : 1/5 Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages. Features • Complements to NPN Type H2N5551 • High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................
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