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RF1S70N06 - N-Channel Enhancement-Mode Power MOSFETs

Description

The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 70A, 60V.
  • rDS(on) = 0.014Ω.
  • Temperature Compensated PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve (Single Pulse).
  • +175oC Operating Temperature Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE.

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Datasheet Details

Part number RF1S70N06
Manufacturer Harris
File Size 65.85 KB
Description N-Channel Enhancement-Mode Power MOSFETs
Datasheet download datasheet RF1S70N06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM December 1995 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Features • 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE Description The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
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