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RF1S70N03SM - Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

Download the RF1S70N03SM datasheet PDF. This datasheet also covers the RF1S70N03 variant, as both devices belong to the same avalanche rated n-channel enhancement-mode power mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 70A, 30V.
  • rDS(ON) = 0.010Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve (Single Pulse).
  • +175oC Operating Temperature.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RF1S70N03-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RF1S70N03SM
Manufacturer Harris
File Size 588.09 KB
Description Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Datasheet download datasheet RF1S70N03SM Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RF1S70N03SM N-Channel Power MOSFETs Fairchild Semiconductor
RF1S70N03SM 70A/ 30V/ 0.010 Ohm/ N-Channel Power MOSFETs Intersil Corporation
RF1S70N03 N-Channel Power MOSFETs Fairchild Semiconductor
RF1S70N06 70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor
RF1S70N06SM 70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor

Other Datasheets by Harris

Part Number Description
RF1S70N03 Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RF1S70N06 N-Channel Enhancement-Mode Power MOSFETs
RF1S70N06SM N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LE N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LESM N-Channel Enhancement-Mode Power MOSFETs

Full PDF Text Transcription

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SEMICONDUCTOR RFP70N03, RF1S70N03, RF1S70N03SM December 1995 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features • 70A, 30V • rDS(ON) = 0.010Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature Description The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors.
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