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HVV0912-150 - Power Transistor

Description

The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz.

Features

  • Silicon MOSFET Technology.
  • Operation from 24V to 50V.
  • High Power Gain.
  • Extreme Ruggedness.
  • Internal Input and Output Matching.
  • Excellent Thermal Stability.
  • All Gold Bonding Scheme.

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Datasheet Details

Part number HVV0912-150
Manufacturer HVVi
File Size 761.42 KB
Description Power Transistor
Datasheet download datasheet HVV0912-150 Datasheet

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Full PDF Text Transcription

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The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications.
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