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HYG190P13NA1P - P-Channel Enhancement Mode MOSFET

Description

TO-220FB-3L TO-263-2L Applications Portable equipment and battery powered systems Ordering and Marking Information P G190P13 XYMXXXXXX B G190P13 XYMXXXXXX P-Channel MOSFET Package Code P: TO-220FB-3L Date Code XYMXXXXXX B: TO-263-2L Note: HUAYI lead-free products contain molding compou

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Datasheet Details

Part number HYG190P13NA1P
Manufacturer HUAYI
File Size 1.40 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG190P13NA1P Datasheet

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Full PDF Text Transcription

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HYG190P13NA1P/B Feature  -125V/-72A RDS(ON)= 18 mΩ(typ.) @ VGS = -10V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) P-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Portable equipment and battery powered systems Ordering and Marking Information P G190P13 XYMXXXXXX B G190P13 XYMXXXXXX P-Channel MOSFET Package Code P: TO-220FB-3L Date Code XYMXXXXXX B: TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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