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HYG090P03LA1C1 - P-Channel Enhancement Mode MOSFET

Description

DDDD Pin1 GSSS DFN3 3-8L Applications z Switching Application z Lithium battery protect board Ordering and Marking Information Single P-Channel MOSFET C1 G090P03 XYMXXXXXX Package Code C1: DFN3 3-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die atta

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Datasheet Details

Part number HYG090P03LA1C1
Manufacturer HUAYI
File Size 602.28 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG090P03LA1C1 Datasheet

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Full PDF Text Transcription

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HYG090P03LA1C1 Single P-Channel Enhancement Mode MOSFET Feature z -30V/-40A RDS(ON)= 7.9 mΩ (typ.) @VGS = -10V RDS(ON)= 10.5 mΩ (typ.) @VGS = -4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and Green Devices Available (RoHS Compliant) Pin Description DDDD Pin1 GSSS DFN3*3-8L Applications z Switching Application z Lithium battery protect board Ordering and Marking Information Single P-Channel MOSFET C1 G090P03 XYMXXXXXX Package Code C1: DFN3*3-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully compliant with RoHS.
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