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HYG090N06LS1C2 - Single N-Channel Enhancement Mode MOSFET

Description

60V/60A RDS(ON)= 7.7 mΩ(typ.)@VGS = 10V RDS(ON)= 11.8 mΩ(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available (RoHS Compliant) DDDD DDDD SSSG GSSS Pin1 PDFN5 6-8L Applications High Frequency Point-of-Load Synchronous Buck

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Datasheet Details

Part number HYG090N06LS1C2
Manufacturer HUAYI
File Size 763.51 KB
Description Single N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG090N06LS1C2 Datasheet

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Full PDF Text Transcription

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HYG090N06LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description  60V/60A RDS(ON)= 7.7 mΩ(typ.)@VGS = 10V RDS(ON)= 11.8 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant) DDDD DDDD SSSG GSSS Pin1 PDFN5*6-8L Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool Application  Networking DC-DC Power System Ordering and Marking Information Single N-Channel MOSFET C2 G090N06 XYMXXXXXX Package Code C2: PPAK5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
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