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HYG090ND06LS1C2 - Dual N-Channel Enhancement Mode MOSFET

Description

PIN1 PDFN8L(5x6) Applications Switching Application Power Management for DC/DC Ordering and Marking Information C2 G090ND06 XXXYWXXXXX Dual N-Channel MOSFET Package Code C2: PDFN8L(5x6) Date Code XXXYWXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials

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Datasheet Details

Part number HYG090ND06LS1C2
Manufacturer HUAYI
File Size 796.88 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG090ND06LS1C2 Datasheet

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HYG090ND06LS1C2 Dual N-Channel Enhancement Mode MOSFET Feature  60V/56A RDS(ON)= 8.0 mΩ(typ.) @VGS = 10V RDS(ON)= 12.2 mΩ(typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description PIN1 PDFN8L(5x6) Applications  Switching Application  Power Management for DC/DC Ordering and Marking Information C2 G090ND06 XXXYWXXXXX Dual N-Channel MOSFET Package Code C2: PDFN8L(5x6) Date Code XXXYWXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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