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HYG082N03LR1C1 - N-Channel Enhancement Mode MOSFET

Description

DDDD DDDD SSSG Pin1 GSSS DFN3 3-8L Applications Power Management for DC/DC Switching Application Battery Protection Ordering and Marking Information Single N-Channel MOSFET C1 G082N03 XYMXXXXX Package Code C1: DFN3 3-8L Date Code XYMXXXXX Note:HUAYI lead-free prod

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Datasheet Details

Part number HYG082N03LR1C1
Manufacturer HUAYI
File Size 735.71 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG082N03LR1C1 Datasheet

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Full PDF Text Transcription

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HYG082N03LR1C1 Single N-Channel Enhancement Mode MOSFET Feature  30V/32A RDS(ON)= 7.0mΩ(typ.) @VGS = 10V RDS(ON)= 10.5 mΩ(typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description DDDD DDDD SSSG Pin1 GSSS DFN3*3-8L Applications  Power Management for DC/DC  Switching Application  Battery Protection Ordering and Marking Information Single N-Channel MOSFET C1 G082N03 XYMXXXXX Package Code C1: DFN3*3-8L Date Code XYMXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.
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