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HYG080N10LS1D - N-Channel Enhancement Mode MOSFET

Description

TO-252-2L Applications High Frequency Point-of-Load Synchronous Buck Converter Ordering and Marking Information Single N-Channel MOSFET D G080N10 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100%

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Datasheet Details

Part number HYG080N10LS1D
Manufacturer HUAYI
File Size 879.39 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG080N10LS1D Datasheet

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HYG080N10LS1D Single N-Channel Enhancement Mode MOSFET Feature  100V/62A RDS(ON)= 7.6mΩ (typ.) @ VGS = 10V RDS(ON)= 11.1mΩ (typ.) @ VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant) Pin Description TO-252-2L Applications  High Frequency Point-of-Load Synchronous Buck Converter Ordering and Marking Information Single N-Channel MOSFET D G080N10 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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