• Part: HYG080ND03LA1S
  • Description: Dual N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 1.35 MB
Download HYG080ND03LA1S Datasheet PDF
HUAYI
HYG080ND03LA1S
Feature - 30V/11A RDS(ON)=9.5 mΩ(typ.)@VGS = 10V RDS(ON)=12.5 mΩ(typ.)@VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Pin Description SOP8L Applications - Power Management for DC/DC - Switching Application - Wireless Power Ordering and Marking Information G080ND03L XXXYWXXXXX Dual N-Channel MOSFET Package Code S: SOP8L Date Code XXXYWXXXXX Note:HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nationfinish;which are fully pliant with Ro HS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and...