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HY1904V - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY1904V, a member of the HY1904D N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-252-2L TO-251-3L TO-251-3S Applications Power

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Datasheet preview – HY1904V

Datasheet Details

Part number HY1904V
Manufacturer HOOYI
File Size 1.34 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1904V Datasheet
Additional preview pages of the HY1904V datasheet.

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Full PDF Text Transcription

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HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management for Inverter Systems Ordering and Marking Information N-Channel MOSFET DU HY1904 HY1904 YYXXXJWW G YYXXXJWW G V HY1904 YYXXXJWW G Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code YYXXX WW Assembly Material G:Halogen Free Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
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