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HY1904C2 - Single N-Channel Enhancement Mode MOSFET

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Description

40V/65A RDS(ON)= 5.1mΩ(typ.)@VGS = 10V RDS(ON)= 6.2mΩ(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available Pin Description D DD D D DD D SSSG GSSS Pin1 PPAK5 6-8L Applications High Frequency Point-of-Load Synchronous Buck

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Datasheet Details

Part number HY1904C2
Manufacturer HOOYI
File Size 0.96 MB
Description Single N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1904C2 Datasheet
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HY1904C2 Single N-Channel Enhancement Mode MOSFET Feature Description  40V/65A RDS(ON)= 5.1mΩ(typ.)@VGS = 10V RDS(ON)= 6.2mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description D DD D D DD D SSSG GSSS Pin1 PPAK5*6-8L Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool Application  Networking DC-DC Power System Ordering and Marking Information Single N-Channel MOSFET C2 HY1904 YYXXXJWW G Package Code C2: PDFN5x6-8L Date Code YYXXX WW Assembly Material G:Halogen Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully compliant with RoHS.
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