• Part: HY1904P
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 1.16 MB
Download HY1904P Datasheet PDF
HUAYI
HY1904P
Feature - 40V/90A RDS(ON)= 4.7mΩ(typ.)@VGS = 10V RDS(ON)= 5.7mΩ(typ.)@VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Lead Free and Green Devices Available (Ro HS pliant) N-Channel Enhancement Mode MOSFET Pin Description DS G DS G G DS TO-220FB-3L TO-220FB-3S TO-263-2L Applications - Switching application - Power Management for Inverter Systems Ordering and Marking Information HY1904 HY1904 HY1904 YYXXXJWW G YYXXXJWW G YYXXXJWW G N-Channel MOSFET Package Code P:TO-220FB-3L M:TO-220FB-3S Date Code YYXXX WW B:TO-263-2L Assembly Material G:Lead Free Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by...